Lawrence Suchow, Norman R. Stemple
JES
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
Lawrence Suchow, Norman R. Stemple
JES
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics