L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Strain-relaxed Si1-xGex films have been investigated using X-ray microdiffraction with a diffracted beam footprint of 0.3 μm×2 μm. Intensity variations in the diffracted beam at different positions on the sample are due to the presence of local tilted regions which are larger in area than the diffracted X-ray beam. These regions are shown to have the same lattice parameter but different orientation with respect to the Si substrate. These regions arise from dislocation pileups, which consist of a larger number of dislocations when larger mismatch strain is relieved.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing