X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
- P.M. Mooney
- J.A. Ott
- et al.
- 1998
- Applied Physics Letters
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119 results for P.M. Mooney
Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
- Kai Shum
- P.M. Mooney
- et al.
- 1997
- Applied Physics Letters
Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature
- P.M. Mooney
- L. Tilly
- et al.
- 1997
- Journal of Applied Physics
Quantum-confined biexcitons i grown on Si(001)
- Kai Shum
- P.M. Mooney
- et al.
- 1997
- Physical Review B - CMMP
Strain relaxation and dislocations in SiGe/Si structures
- P.M. Mooney
- 1996
- Materials Science and Engineering R: Reports
Unique x-ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films
- J.L. Jordan-Sweet
- P.M. Mooney
- et al.
- 1996
- Journal of Applied Physics
Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Near band-edge photoluminescence in relaxed Si1-xGex layers
- L. Tilly
- P.M. Mooney
- et al.
- 1995
- Applied Physics Letters
Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Evolution of strain relaxation in step-graded SiGe/Si structures
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters