Stress liner proximity technique to enhance carrier mobility in high-κ metal gate MOSFETs
- Dechao Guo
- Kathryn Schonenberg
- et al.
- 2009
- MRS Fall Meeting 2009
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17 results for Kathryn Schonenberg
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Self-consistent and efficient electro-thermal analysis for poly/metal gate FinFETs
- Satish Kumar
- Rajiv V. Joshi
- et al.
- 2006
- IEDM 2006
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- IEDM 1996
200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
CMOS gate height scaling
- Zhibin Ren
- K. Schonenberg
- et al.
- 2008
- ICSICT 2008
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006