Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2010
- Electrochemical and Solid-State Letters
Publications
Date
Featured collections
Popular topics
23 results for K. Chanda
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
Line edge roughness and spacing effect on low-k TDDB characteristics
- F. Chen
- J.R. Lloyd
- et al.
- 2008
- IRPS 2008
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
- F. Chen
- O. Bravo
- et al.
- 2006
- IRPS 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- S. Lane
- M. Fukasawa
- et al.
- 2005
- AMC 2005