Julien Autebert, Aditya Kashyap, et al.
Langmuir
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Robert W. Keyes
Physical Review B
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals