Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
P. Alnot, D.J. Auerbach, et al.
Surface Science
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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MRS Spring 2000