Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Publications
101 results for G.D. Pettit
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- Y.S. Huang
- H. Qiang
- et al.
- 1991
- Journal of Applied Physics
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
- Z. Hang
- D. Yan
- et al.
- 1991
- Physical Review B
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs
- Yichun Yin
- D. Yan
- et al.
- 1991
- Physical Review B
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Doping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
- et al.
- 1991
- IEEE Photonics Technology Letters