Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
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84 results for Lawrence Clevenger
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Quantitative Investigation of Titanium/Amorphous-Silicon Multilayer Thin Film Reactions
- K.N. Tu
- L. Clevenger
- et al.
- 2011
- Journal of Materials Research
Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films
The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines
- K.P. Rodbell
- L. Gignac
- et al.
- 2000
- Journal of Applied Physics
Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond
- R.F. Schnabel
- L. Clevenger
- et al.
- 2000
- Microelectronic Engineering
Linewidth and underlayer influence on texture in submicrometer-wide Al and AlCu lines
- J.L. Hurd
- K.P. Rodbell
- et al.
- 1998
- Applied Physics Letters
Interdiffusion and phase formation in Cu(Sn) alloy films
- L. Clevenger
- B. Arcot
- et al.
- 1998
- Journal of Applied Physics
Low temperature formation of C54-TiSi2 using titanium alloys
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Applied Physics Letters
Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Journal of Materials Research