Effect of impurity on Cu electromigration
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
The transformation of titanium silicide from the C49 to the C54 structure was studied using x-ray diffraction of samples containing arrays of narrow lines of preformed C49 TiSi2. Using a synchrotron x-ray source, diffraction patterns were collected at 1.5-2°C intervals during sample heating at rates of 3 or 20°C/s to temperatures of 1000-1100°C. The results show a monotonic increase in the C54 transition temperature by as much as 180°C with a decreasing linewidth from 1.0 to 0.1 μm. Also observed is a monotonic increase in (040) preferred orientation of the C54 phase with decreasing linewidth. The results demonstrate the power of in situ x-ray diffraction of narrow line arrays as a tool to study finite size effects in thin-film reactions.© 1995 American Institute of Physics.
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
K. Barmak, G.A. Lucadamo, et al.
MRS Spring Meeting 1999
H. Kim, C. Cabral Jr., et al.
MRS Proceedings 2002
V. Svilan, K.P. Rodbell, et al.
Journal of Electronic Materials