Hole injection into silicon nitride: Interface barrier energies by internal photoemission
- D.J. Dimaria
- P.C. Arnett
- 2008
- Applied Physics Letters
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119 results for D.J. DiMaria
Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structures
- D.J. DiMaria
- 2008
- Journal of Applied Physics
Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
Contact currents in silicon nitride
- P.C. Arnett
- D.J. Dimaria
- 2008
- Journal of Applied Physics
Effects of electron-beam irradiation on the properties of CVD Si 3N4 films in MNOS structures
- T.P. Ma
- B.H. Yun
- et al.
- 2008
- Journal of Applied Physics
Room-temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal-silicon dioxide-silicon structure
- D.J. DiMaria
- 2008
- Journal of Applied Physics
Electron-trapping characteristics of W in SiO2
- D.R. Young
- D.J. Dimaria
- et al.
- 2008
- Journal of Applied Physics
Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing
- D.J. DiMaria
- Z.A. Weinberg
- et al.
- 2008
- Journal of Applied Physics
Use of electron-trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures
- D.J. Dimaria
- D.R. Young
- et al.
- 2008
- Applied Physics Letters
Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
- D.J. DiMaria
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics