Oxide scaling limit for future logic and memory technology
- J.H. Stathis
- D.J. DiMaria
- 1999
- Microelectronic Engineering
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119 results for D.J. DiMaria
Ultimate limit for defect generation in ultra-thin silicon dioxide
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. DiMaria
- J.H. Stathis
- 1997
- Applied Physics Letters
Dependence on gate work function of oxide charging, defect generation, and hole currents in metal-oxide-semiconductor structures
- D.J. DiMaria
- 1997
- Journal of Applied Physics
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. Dimaria
- 1997
- Microelectronic Engineering
On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering
Defect production, degradation, and breakdown of silicon dioxide films
- D.J. Dimaria
- 1997
- Solid-State Electronics
Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films
- D.J. DiMaria
- 1996
- Applied Physics Letters
Anode hole injection and trapping in silicon dioxide
- D.J. DiMaria
- E. Cartier
- et al.
- 1996
- Journal of Applied Physics
Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
- D.J. DiMaria
- D.A. Buchanan
- et al.
- 1995
- Journal of Applied Physics