Preparation and Some Properties of Chemically Vapor-Deposited Si-Rich SiO and Si3N4 Films
- D.W. Dong
- E.A. Irene
- et al.
- 2019
- JES
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31 results for D.R. Young
Electron current injected into SiO2 from p-type Si depletion regions
- D.R. Young
- 2008
- Journal of Applied Physics
Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K
- D.J. DiMaria
- J.M. Aitken
- et al.
- 2008
- Journal of Applied Physics
Electron trapping by radiation-induced charge in MOS devices
- J.M. Aitken
- D.R. Young
- 2008
- Journal of Applied Physics
Electron-trapping characteristics of W in SiO2
- D.R. Young
- D.J. Dimaria
- et al.
- 2008
- Journal of Applied Physics
Use of electron-trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures
- D.J. Dimaria
- D.R. Young
- et al.
- 2008
- Applied Physics Letters
Electron trapping in electron-beam irradiated SiO2
- J.M. Aitken
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
- D.J. DiMaria
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Light-activated storage device (LASD)
- D.J. DiMaria
- R.F. DeKeersmaecker
- et al.
- 2008
- Journal of Applied Physics
Electron trapping in SiO2 at 295 and 77 °K
- D.R. Young
- E.A. Irene
- et al.
- 2008
- Journal of Applied Physics