Charge Trap Transistor (CTT): An embedded fully logic-compatible multiple-time programmable non-volatile memory element for high-k-metal-gate CMOS technologies
- Faraz Khan
- Eduard Cartier
- et al.
- 2017
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
307 results at IEEE Electron Device Letters
A Retention-Aware multilevel cell phase change memory program evaluation metric
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- IEEE Electron Device Letters
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
Detecting Correlations Using Phase-Change Neurons and Synapses
- Tomas Tuma
- Manuel Le Gallo
- et al.
- 2016
- IEEE Electron Device Letters
Titanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS
- Martin M. Frank
- Cyril Cabral
- et al.
- 2016
- IEEE Electron Device Letters
CMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
The Impact of Self-Heating on Charge Trapping in High-k-Metal-Gate nFETs
- Faraz Khan
- Eduard Cartier
- et al.
- 2016
- IEEE Electron Device Letters
Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress
- Keith A. Jenkins
- Barry P. Linder
- 2015
- IEEE Electron Device Letters
Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
- Vishal A. Tiwari
- Young Way Teh
- et al.
- 2015
- IEEE Electron Device Letters
Optimization of conductance change in Pr1-xCaxMnO3-based synaptic devices for neuromorphic systems
- J. Jang
- Sangsu Park
- et al.
- 2015
- IEEE Electron Device Letters