Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- IEEE TNS
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64 results at IEEE TNS
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
- Kurt A. Moen
- Stanley D. Phillips
- et al.
- 2010
- IEEE TNS
Characterization of parasitic bipolar transistors in 45 nm silicon-on-insulator technology
- Larry Wissel
- Phil Oldiges
- et al.
- 2010
- IEEE TNS
Alpha-particle emission energy spectra from materials used for solder bumps
- Michael S. Gordon
- Kenneth P. Rodbell
- et al.
- 2010
- IEEE TNS
Impact of spacecraft shielding on direct ionization soft error rates for sub-130 nm technologies
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2010
- IEEE TNS
Heavy ion testing with iron at 1 GeV/amu
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2010
- IEEE TNS
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2010
- IEEE TNS
Flip-flop upsets from single-event-transients in 65 nm clock circuits
- Larry Wissel
- David F. Heidel
- et al.
- 2009
- IEEE TNS
An evaluation of an ultralow background alpha-particle detector
- Michael S. Gordon
- David F. Heidel
- et al.
- 2009
- IEEE TNS
Modeling of alpha-induced single event upsets for 45 nm node SOI devices using realistic C4 and 3D circuit geometries
- Henry H. K. Tang
- Conal E. Murray
- et al.
- 2009
- IEEE TNS