First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integrationVeeresh DeshpandeV. Djaraet al.2016EUROSOI-ULIS 2016
III-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effectsAndreas SchenkSaurabh Santet al.2016EUROSOI-ULIS 2016
Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structuresLukas CzornomazV. Djaraet al.2016EUROSOI-ULIS 2016