Stress migration lifetime for Cu interconnects with CoWP-only cap
- Jeffrey P. Gambino
- Christy L. Johnson
- et al.
- 2006
- IEEE T-DMR
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19 results at IEEE T-DMR
Evolution of strain energy during recrystallization of plated Cu films
- Conal E. Murray
- Mikhail Treger
- et al.
- 2016
- IEEE T-DMR
Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk n-channel FinFETs
- K. Aditya
- R. Singh
- et al.
- 2020
- IEEE T-DMR
An agile post-silicon validation methodology for the address translation mechanisms of modern microprocessors
- George Papadimitriou
- Athanasios Chatzidimitriou
- et al.
- 2017
- IEEE T-DMR
Electromigration: Void dynamics
- C. Witt
- V. Calero
- et al.
- 2016
- IEEE T-DMR
Degradation of high-κ/metal gate nMOSFETs under ESD-like stress in a 32-nm technology
- Yang Yang
- Robert J. Gauthier
- et al.
- 2011
- IEEE T-DMR
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
- Andreas Kerber
- Eduard Albert Cartier
- 2009
- IEEE T-DMR
Gate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
- et al.
- 2008
- IEEE T-DMR
MOS technology drivers
- William R. Tonti
- 2008
- IEEE T-DMR
The impact of aging effects and manufacturing variation on SRAM soft-error rate
- Ethan H. Cannon
- A.J. KleinOsowski
- et al.
- 2008
- IEEE T-DMR