A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films

Thickness data from semiconductor-grade silicon-on-insulator thin-film samples determined from high-resolution X-ray diffraction (HRXRD) data using the Scherrer equation, rocking-curve modeling, thickness fringe analysis, Fourier analysis and the Warren-Averbach method, as well as with cross-sectional transmission electron microscopy and X-ray reflectivity measurements, are presented. The results show that the absolute accuracy of thin-film thickness values obtained from HRXRD data is approximately 1 nm for all techniques if all sources of broadening are correctly identified, while their precision is one or two orders of magnitude smaller. The use of multiple techniques is required to determine the various contributions to peak broadening. © 2009 International Union of Crystallography.