Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Controlled oxygen incorporation in GaAs using Al-0 bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped AlxGa1-xAs using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in AlxGa1-xAs. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio, was found to be quite different from the case of DMALO, mainly due to the differences between methyl- and ethyl-based growth chemistries. Physical, electrical, and optical properties of these oxygen-doped GaAs are also reported. © 1994 The Metallurgical of Society of AIME.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R. Ghez, J.S. Lew
Journal of Crystal Growth
Lawrence Suchow, Norman R. Stemple
JES
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001