H.D. Dulman, R.H. Pantell, et al.
Physical Review B
An anisotropic growth of nanostructures was observed when germanium was electroplated on a patterned silicon substrate from a nonaqueous solution. Instead of an isotropic growth of mushroom cap expected for electroplating through mask, wire-shaped and wall-shaped structures were obtained, respectively, on via and stripe patterns on silicon substrate. The presence of water in the electrolyte and a high current density were found critical to the anisotropic growth. A passivation of outer surface of the deposit is believed to be involved and prohibits the lateral growth of the deposit. © 2007 The Electrochemical Society.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Kigook Song, Robert D. Miller, et al.
Macromolecules