C.B. Carter, Z. Elgat, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Paper
Characterization of "ultrathin-Cu"/Ru(Ta)/TaN liner stack for copper interconnects
Abstract
Barrier property, gap-fill quality, and electromigration (EM) resistance of a TaN diffusion barrier with ultrathin-Cu/Ru(Ta) liner layers were carried out to evaluate its feasibility for back-end-of-the-line Cu/low-κ interconnects. Ru/TaN and Ru0.9Ta0.1TaN liner stacks show comparable oxidation and Cu diffusion barrier properties to the conventional Ta/TaN bilayer liner stack. Through observed better wettability to ultrathin Cu seed and therefore enhanced gap-fill quality, both Ru/TaN and Ru 0.9Ta0.1TaN liner stacks show EM resistance improvement over the Ta/TaN bilayer liner system. © 2010 IEEE.
Related
Conference paper
Lower-k SiCOH integration for 65 nm ground rules
T. Nogami, S. Lane, et al.
VMIC 2005
M. Liehr, S. Cohen
Applied Physics Letters
C.C. Tsuei, J.R. Kirtley, et al.
Physical Review Letters