Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Soft-x-ray photoemission spectroscopy (SXPS) measurements of Fermi-level positions within the band gap of clean, GaAs(100) surfaces demonstrate that photovoltaic charging produces a major shift in the apparent band bending at low (50 100 K) temperatures. These measurements confirm recent predictions of Hecht [M. H. Hecht, Phys. Rev. B 41, 7918 (1990)], based on restoring currents limited by carrier transport through the depletion region, highlight the effects of photovoltaic charging for clean (versus metallized) semiconductor surfaces, and justify Hecht's claims for a reassessment of many previous low-temperature photoemission studies of Fermi-level movement. © 1990 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Imran Nasim, Melanie Weber
SCML 2024
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
J. Tersoff
Applied Surface Science