Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Soft-x-ray photoemission spectroscopy (SXPS) measurements of Fermi-level positions within the band gap of clean, GaAs(100) surfaces demonstrate that photovoltaic charging produces a major shift in the apparent band bending at low (50 100 K) temperatures. These measurements confirm recent predictions of Hecht [M. H. Hecht, Phys. Rev. B 41, 7918 (1990)], based on restoring currents limited by carrier transport through the depletion region, highlight the effects of photovoltaic charging for clean (versus metallized) semiconductor surfaces, and justify Hecht's claims for a reassessment of many previous low-temperature photoemission studies of Fermi-level movement. © 1990 The American Physical Society.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kigook Song, Robert D. Miller, et al.
Macromolecules
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS