H.J. Wen, R. Ludeke, et al.
Applied Surface Science
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
H.J. Wen, R. Ludeke, et al.
Applied Surface Science
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VLSI Technology 2011
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