F. Chen, J. Gill, et al.
IRPS 2004
In the advanced on-chip interconnect Technology, the interconnect reliability has been a subject of utmost importance. As the line width is reduced to the sub - micron range, the current carrying capability of the Cu interconnect lines becomes an important issue. This paper discusses the electromigration behavior of Cu interconnects passivated with low-k dielectrics. The influences of the cap dielectrics, the liner thickness, via/liner contact and multiple via on the EM lifetime are discussed. The data on the EM kinetics are also presented. copyright The Electrochemical Society.
F. Chen, J. Gill, et al.
IRPS 2004
F. Chen, J. Gill, et al.
Microelectronics Reliability
D. Edelstein, J. Heidenreich, et al.
IEDM 1997
C.-C. Yang, D. Edelstein, et al.
IITC 2005