Ivan Haller, Ralph Feder, et al.
JES
Electron-optical techniques were employed to fabricate planar silicon transistors having a 1-micron strip width and a combined dimensional and registration tolerance of 1000 Å. A new electron-sensitive positive resist was used to define a conventional oxide diffusion mask. The exposure equipment is described and electrical parameters of the complete device are given. Copyright © 1970 by The Institute of Electrical and Electronics Engineers, Inc.
Ivan Haller, Ralph Feder, et al.
JES
Michael Hatzakis, Kevin J. Stewart, et al.
Microelectronic Engineering
E. Pugh, Vir A. Dhaka
ISSCC 1978
Warren D. Grobman, Hans E. Luhn, et al.
IEEE T-ED