Lung function measurement by optical contouring
A.R. Gourlay, G. Kaye, et al.
Proceedings of SPIE 1989
The performance of KRS-XE, a low activation energy, chemically amplified resist designed specifically for mask making with electron beam lithography, has been extended in terms of its sensitivity, coated-film stability and etch resistance. By careful manipulation of resist composition, high sensitivity formulations have been generated that will allow exposure doses of less than 10 μC/cm2 with 50 keV electron beam tools. This sensitivity enhancement has been achieved without sacrificing the robust process latitude previously reported for this resist. The performance of this resist can be maintained, even in coated film form, for prolonged periods of time by careful packaging of the coated films. Additionally, formulations with etch resistance versus chlorine/oxygen plasma in excess of that of novolak-based resists have been generated by the incorporation of organometallic additives. The combination of these improvements leads to resist formulations that will allow the high resolution and throughput that is demanded for state-of-the art mask making applications.
A.R. Gourlay, G. Kaye, et al.
Proceedings of SPIE 1989
R.B. Morris, Y. Tsuji, et al.
International Journal for Numerical Methods in Engineering
Minghong Fang, Zifan Zhang, et al.
CCS 2024
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007