Hsin-Yu Tsai, Hiroyuki Miyazoe, et al.
SPIE Advanced Lithography 2013
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET IDSAT 825/950 μA/μm (circumference-normalized) or 2592/2985 μA/μm (diameter-normalized) at supply voltage VDD = 1 V and off-current IOFF = 15 nA/μm. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed. ©The Electrochemical Society.
Hsin-Yu Tsai, Hiroyuki Miyazoe, et al.
SPIE Advanced Lithography 2013
Shimon Levi, Konstantin Chirko, et al.
SPIE Advanced Lithography 2015
Sarunya Bangsaruntip, A. Majumdar, et al.
VLSI Technology 2010
Shimon Levi, Ishai Schwarzband, et al.
SPIE Advanced Lithography 2014