Conference paper
(Invited) FinFET technology
Kangguo Cheng
ECS Meeting 2017
We report experimental data comparing aggressively scaled SiGe channel extremely thin SOI MOSFETs with either relaxed or strained channels. The analysis clearly demonstrates that without strain, SiGe channel delivers performance comparable with relaxed Si devices. Significantly higher performance is observed only in compressively strained SiGe channel devices, especially in narrower devices where the transverse component of the strain is partially relaxed. © 2013 IEEE.
Kangguo Cheng
ECS Meeting 2017
Ali Khakifirooz, Pranita Kulkarni, et al.
ECS Transactions
N. Breil, B.-C. Lee, et al.
VLSI Technology 2023
F. Allibert, Kangguo Cheng, et al.
S3S 2012