Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014
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19 results for Hong He
Towards electrical testable soi devices using directed self-assembly for fin formation
- Chi Chun Liu
- Cristina Estrada-Raygoza
- et al.
- 2014
- SPIE Advanced Lithography 2014
Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization
- F. Allibert
- Pierre Morin
- et al.
- 2014
- S3S 2014
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
Gas source depletion study of high-order silanes of silicon-based epitaxial layers grown with RPCVD and low temperatures
- Keith Chung
- Paul Brabant
- et al.
- 2012
- ECS Meeting 2012
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
- Manabu Shinriki
- Keith Chung
- et al.
- 2012
- Thin Solid Films