Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Two aqueous acid solutions are examined for cleaning DRAM devices built with Al-RIE technology. A mixture of chromic and phosphoric acids (C/P) successfully removed Al-RIE residue but did not prevent Al(Cu) galvanic corrosion. A novel clean formulated with a diluted mixture of sulfuric acid and hydrogen peroxide (dSP+) removed Al-RIE residue without damaging Al(Cu) irregardless of the galvanic environment. The dSP+ clean is demonstrated to be chemical in nature and to provide protective passivation on Al(Cu). The investigation utilizes SEM and electrochemical polarization techniques.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
R. Ghez, J.S. Lew
Journal of Crystal Growth
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.H. Stathis, R. Bolam, et al.
INFOS 2005