Yu Gyeong Kang, Masatoshi Ishii, et al.
Advanced Science
Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 °C-300 hrs. The 10 years-220 °C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.
Yu Gyeong Kang, Masatoshi Ishii, et al.
Advanced Science
Ruqiang Bao, Brian Greene, et al.
IEDM 2015
Win-San Khwa, Meng-Fan Chang, et al.
ISSCC 2016
Robert L. Bruce, Gloria Fraczak, et al.
SPIE Advanced Lithography 2017