A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A chemically amplified resist material consisting of poly[2-cyano-2-(p-vinylphenyl) butanoic acid] and bis[[(2-nitrobenzyl)oxy]carbonyl]hexane-1,6-diamine has been designed and tested in negative and positive tone imaging. The resist operates on the principle of base-catalyzed decarboxylation. Amine generated by exposure to UV radiation catalyzes the thermal loss of carbon dioxide from the polymer side chain thereby changing the solubility of the resist film in aqueous base developer. Image reversal is accomplished by in situ silylation of the exposed and thermolyzed film followed by dry development using an oxygen plasma. The resist shows high sensitivity to deep UV irradiation, ca. 10 mJ/cm2, while image contrast is excellent.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Eloisa Bentivegna
Big Data 2022