Aditya Bansal, Keunwoo Kim, et al.
ICICDT 2007
Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures. © 2011 IEEE.
Aditya Bansal, Keunwoo Kim, et al.
ICICDT 2007
Baozhen Li, Andrew Kim, et al.
IRPS 2018
K. Zhao, J.H. Stathis, et al.
IRPS 2011
Barry P. Linder, A. Dasgupta, et al.
IRPS 2016