Chih-Chao Yang, Fen Chen, et al.
IITC 2012
Robust ultrathin (20 nm) trilayer low k SiNx/SiNy/SiCNH dielectric Cu caps (k ∼4.0-4.2) with post ultraviolet (UV) cure compressive stress were developed and integrated into 22nm CMOS Back End Of Line (BEOL) devices. The new cap reduces device's capacitance (∼ 4%) and enhances stress stability in Cu-Ultra low k structures. ©The Electrochemical Society.
Chih-Chao Yang, Fen Chen, et al.
IITC 2012
Son Van Nguyen, Hosadurga Shobha, et al.
IITC 2021
E. Cartier, Andreas Kerber, et al.
ECS Meeting 2011
James J. Kelly, Takeshi Nogami, et al.
ECS Meeting 2011