32nm CMOS SOI test site for emission tool evaluation
Alan J. Weger, Franco Stellari, et al.
ISTFA 2013
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
Alan J. Weger, Franco Stellari, et al.
ISTFA 2013
Franco Stellari, Alan J. Weger, et al.
ESSDERC/ESSCIRC 2004
Franco Stellari, Andrea Bahgat Shehata, et al.
IPFA 2020
Damon B. Farmer, Hsin-Ying Chiu, et al.
Nano Letters