Alison Lennon, Jack Colwell, et al.
Progress in Photovoltaics
Conference paper
SOI FinFET soft error upset susceptibility and analysis
Abstract
Measurements of the soft error upset cross section for SOI FinFET SRAMs are compared to earlier generation PDSOI SRAMs, with the FinFET circuit showing 2-3 orders of magnitude lower soft error susceptibility. This improvement is shown by simulations to be due to the better electrostatic control of the channel in the FinFET.
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