S. Rishton, K. Ismail, et al.
Microelectronic Engineering
Paper
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
Abstract
The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.
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