Paper

01 Jan 1985

VA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor

View publication

Abstract

No abstract available.

Related

Paper

Volatile metal-oxide incorporation in layers of GaAs, Ga _1-xAl_xAs and related compounds grown by molecular beam epitaxy

Paper

Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors

Paper

Different Fermi-level pinning behavior on n- and p-type GaAs(001)

Paper

Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility

View all publications