Chemical and structural aspects of reaction at the Ti/Si interface
- R. Butz
- G.W. Rubloff
- et al.
- 1984
- Physical Review B
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22 results for T.Y. Tan
Characterization of semiconductor silicon by transmission electron microscopy
- Teh Y. Tan
- 1989
- Proceedings of SPIE 1989
Chemical reaction and Schottky-barrier formation at V/Si interfaces
- J.G. Clabes
- G.W. Rubloff
- et al.
- 1984
- Physical Review B
Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon
- T.Y. Tan
- B.J. Ginsberg
- 1983
- Applied Physics Letters
Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces
- P.E. Schmid
- P.S. Ho
- et al.
- 1983
- Physical Review B
On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon
- T.Y. Tan
- U. Gösele
- et al.
- 1983
- Applied Physics A Solids and Surfaces
Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound
- T.Y. Tan
- U. Gösele
- 1982
- Journal of Applied Physics
Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon
- T.Y. Tan
- U. Gösele
- 1982
- Applied Physics Letters
Oxygen diffusion and thermal donor formation in silicon
- U. Gösele
- T.Y. Tan
- 1982
- Applied Physics A Solids and Surfaces
Growth kinetics of oxidation-induced stacking faults in silicon: A new concept
- T.Y. Tan
- U. Gösele
- 1981
- Applied Physics Letters