Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
69 results for P.D. Kirchner
An In0.15 Ga0.85 As/GaAs Pseudomorphic Single Quantum Well HEMT
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE Electron Device Letters
Controlled low barrier height n+-InGaAs/n-GaAs pseudomorphic heterojunction schottky diodes
- A.W. Kleinsasser
- J. Woodall
- et al.
- 1985
- Applied Physics Letters
Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs
- P.D. Kirchner
- T.N. Jackson
- et al.
- 1985
- Applied Physics Letters
VA-5 Pseudomorphic GaInAs/GaAs Single Quantum Well High Electron Mobility Transistor
- J.J. Rosenberg
- M. Benlamri
- et al.
- 1985
- IEEE T-ED
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
- M.I. Nathan
- T.N. Jackson
- et al.
- 1983
- Journal of Electronic Materials
IVA-7 A New High Purity Si Doping Source for MBE Grown GaAs Devices
- P.D. Kirchner
- J. Woodall
- et al.
- 1983
- IEEE T-ED
Volatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
The analysis of exponential and nonexponential transients in deep-level transient spectroscopy
- P.D. Kirchner
- W.J. Schaff
- et al.
- 1981
- Journal of Applied Physics