Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
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49 results for M.A. Tischler
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
Effect of indium on the properties of DX centers in Si-doped In y(Ga0.3Al0.7)1-yAs
- L.S. Pann
- M.A. Tischler
- et al.
- 1990
- Journal of Applied Physics
Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters