Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
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26 results for L.F. Wagner
On the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
The Effect of Extrinsic Base Encroachment on the Switch-On Transient of Advanced Narrow-Emitter Bipolar Transistors
- C.T. Chuang
- 1988
- IEEE T-ED
A Circuit Concept for Reducing Soft Error in Highspeed Memory Cells
- Denny D. Tang
- Ching-Te Chuang
- 1988
- IEEE Journal of Solid-State Circuits
An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
An Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology
- G.P. Li
- Tak H. Ning
- et al.
- 1987
- IEEE T-ED
On the Punchthrough Characteristics of Advanced Self-Aligned Bipolar Transistors
- C.T. Chuang
- Denny Duan-Lee Tang
- 1987
- IEEE T-ED
ON THE IMPURITY PROFILES OF DOWN SCALED BIPOLAR TRANSISTORS.
- D.D. Tang
- G.P. Li
- et al.
- 1985
- IEDM 1985
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- C.T. Chuang
- G.P. Li
- et al.
- 1985
- IEEE T-ED
Probing the Minority-Carrier Quasi-Fermi Level in Epitaxial Schottky-Barrier Diodes
- Lawrence F. Wagner
- C.T. Chuang
- 1985
- IEEE T-ED