Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
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48 results for R.A. Roy
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Very high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
The future of silicide for CMOS contacts
- R.A. Roy
- C. Cabral Jr.
- et al.
- 1999
- MRS Spring Meeting 1999
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
In-situ X-ray diffraction analysis of TiSi2 phase formation from a titanium-molybdenum bilayer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1996
- MRS Fall Meeting 1996
Dependence of crystallographic texture of C54 TiSi2 on thickness and linewidth in submicron CMOS structures
- V. Svilan
- K.P. Rodbell
- et al.
- 1996
- MRS Spring Meeting 1996
In situ analysis of the formation of thin TiSi2 (<50 nm) contacts in submicron CMOS structures during rapid thermal annealing
- L. Clevenger
- C. Cabral Jr.
- et al.
- 1995
- MRS Fall Meeting 1995