U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The device design and characteristics of sub-100 nm strained Si N- and PMOSFETs were discussed. A enhancement of 110% was observed in the strained Si devices with 1.2% tensile strain, along with a 45% increase in the peak hole mobility. A comparison of current-voltage characteristics of 100 nm PFETs was done. The strained Si (SS) PFETs showed comparable subthreshold characteristics while showing higher current drive.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing
M. Arafa, P. Fay, et al.
Electronics Letters