Electron transport in the quantum hall regime in strained si/sige
- K. Ismail
- 1996
- Physica B: Condensed Matter
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Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
- R.G. Clark
- R.B. Dunford
- et al.
- 1996
- Physica B: Condensed Matter
Si/SiGe quantum wells: fundamentals to technology
- K. Ismail
- B.S. Meyerson
- 1995
- Journal of Materials Science: Materials in Electronics
Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters
Electron-phonon interaction in the transport properties of quantum wires
- J. Wróbel
- T. Brandes
- et al.
- 1995
- EPL
Fabrication of Aharonov-Bohm rings in Si/SiGe heterostructure
- K.Y. Lee
- K. Ismail
- et al.
- 1995
- Microelectronic Engineering
Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields
- R.B. Dunford
- R. Newbury
- et al.
- 1995
- Solid State Communications