Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- IEDM 1996
Publications
Date
Featured collections
Popular topics
10 results for M.M. Gilbert
200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
A Si-Ge HBT technology for the wireless marketplace
- D. Ahlgren
- D.A. Sunderland
- et al.
- 1996
- ESSDERC 1996
113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
The stability of Si1-xGex strained layers on small-area trench-isolated silicon
- K. Schonenberg
- Siu-Wai Chan
- et al.
- 1997
- Journal of Materials Research
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
- D. Nguyen-Ngoc
- D.A. Sunderland
- et al.
- 1996
- Applied Surface Science
Si-Ge heterojunction bipolar technology for high-speed integrated circuits
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- Canadian Journal of Physics
IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices