Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks
- H.D. Xiong
- D.M. Fleetwood
- et al.
- 2003
- Applied Physics Letters
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76 results for E. Gusev
Charge detrapping in HfO 2 high-κ gate dielectric stacks
- E. Gusev
- C. D'Emic
- 2003
- Applied Physics Letters
Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2003
- Journal of Applied Physics
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2003
- Journal of Applied Physics
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- Journal of Applied Physics
High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
Interface reactions in ZrO 2 based gate dielectric stacks
- M. Gribelyuk
- A.C. Callegari
- et al.
- 2002
- Journal of Applied Physics
Measurement of barrier heights in high permittivity gate dielectric films
- S. Zafar
- E. Cartier
- et al.
- 2002
- Applied Physics Letters
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
- M.L. Green
- E. Gusev
- et al.
- 2001
- Journal of Applied Physics
Robustness of ultrathin aluminum oxide dielectrics on Si(001)
- M. Copel
- E. Cartier
- et al.
- 2001
- Applied Physics Letters