Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectricsK. RimE. Gusevet al.2002VLSI Technology 2002
Soft error rate scaling for emerging SOI technology optionsP. OldigesK. Bernsteinet al.2002VLSI Technology 2002
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETsK. RimJ.O. Chuet al.2002VLSI Technology 2002
High performance double-gate device technology challenges and opportunitiesM. IeongH.-S. Wonget al.2002ISQED 2002
Carbon implanted halo for super halo characteristic NFETs in bulk and SOIJohn Ellis-MonaghanKam-Leung Leeet al.2001ESSDERC 2001
High performance of planar double gate MOSFETs with thin backgate dielectricsE.C. JonesM. Ieonget al.2001DRC 2001
Strained Si NMOSFETs for high performance CMOS technologyK. RimS.J. Koesteret al.2001VLSI Technology 2001
Monte Carlo modeling of threshold variation due to dopant fluctuationsD.J. FrankY. Tauret al.1999VLSI Technology 1999
Monte Carlo modeling of threshold variation due to dopant fluctuationsD.J. FrankY. Tauret al.1999VLSI Circuits 1999