Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
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69 results for Marwan Khater
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
SiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006
Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz
- J.-S. Rieh
- M. Khater
- et al.
- 2006
- Electronics Letters
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
- Jae-Sung Rieh
- Marwan Khater
- et al.
- 2006
- IEEE Transactions on Electron Devices
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters