High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
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90 results for Martin M Frank
Epitaxial SrO interfacial layers for HfO2 -Si gate stack scaling
- Chiara Marchiori
- Martin M. Frank
- et al.
- 2011
- Applied Physics Letters
Domain dynamics in epitaxial Pb (Zr0.2Ti0.8)O 3 films studied by piezoelectric force microscopy
- Levente J. Klein
- Catherine Dubourdieu
- et al.
- 2010
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Oxygen migration in TiO2-based higher-k gate stacks
- Sangbum Kim
- Stephen L. Brown
- et al.
- 2010
- Journal of Applied Physics
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films
- D.H. Hill
- R.A. Bartynski
- et al.
- 2008
- Journal of Applied Physics
Chemical and structural modifications in a 193-nm photoresist after low-k dry etch
- E. Kesters
- M. Claes
- et al.
- 2008
- Thin Solid Films
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- Kingsuk Maitra
- Martin M. Frank
- et al.
- 2007
- Journal of Applied Physics