Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors
- Michael Titze
- Alex Belianinov
- et al.
- 2024
- ACS Applied Electronic Materials
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26 results for Huimei Zhou
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction
- Ernest Wu
- Brian McGowan
- et al.
- 2024
- IRPS 2024
Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2023
- IRPS 2023
SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- M. Bhuiyan
- M. Kim
- et al.
- 2021
- IEDM 2021
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
Challenges and Opportunities for Stacked Transistor: DTCO and Device
- J. Wang
- S.D. Suk
- et al.
- 2021
- VLSI Technology 2021
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs
- Nilotpal Choudhury
- Tarun Samadder
- et al.
- 2021
- IRPS 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021