A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007
Publications
Date
Featured collections
Popular topics
26 results for P.-C. Wang
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositions
- C.-C. Yang
- D. Edelstein
- et al.
- 2004
- ADMETA 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
In-situ x-ray microbeam Cu fluorescence and strain measurements on Al(0.5 at.% Cu) conductor lines during electromigration
- H.K. Kao
- G.S. Cargill III
- et al.
- 1999
- Materials Research Society Symposium - Proceedings
Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2013
- Microelectronic Engineering
Stress control during thermal annealing of copper interconnects
- C.-C. Yang
- Christian Witt
- et al.
- 2011
- Applied Physics Letters
Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2010
- Electrochemical and Solid-State Letters
Foundation of rf CMOS and SiGe BiCMOS technologies
- James S. Dunn
- David C. Ahlgren
- et al.
- 2003
- IBM J. Res. Dev
The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing
- R. Filippi
- R.A. Wachnik
- et al.
- 2002
- Journal of Applied Physics